Third generation wide bandgap semiconductor
Wide Band Gap Semiconductor (WBS) is a third generation semiconductor material developed from the first generation of elemental semiconductor materials (Si) and second generation compound semiconductor materials (GaAs, GaP, InP, etc.) with a forbidden band width greater than 2eV Class materials include SiC (silicon carbide), C-BN (cubic boron nitride), GaN (gallium nitride) AlN (aluminum nitride), ZnSe (zinc selenide) and diamond.
The development of the wide bandgap semiconductor is mainly SiC and GaN, in which the development of SiC earlier, silicon carbide SiC, gallium nitride GaN, silicon Si and gallium arsenide GaAs

The band gap of SiC and GaN is much larger than that of Si and GaAs. The corresponding intrinsic carrier concentration is less than that of Si and GaAs. The maximum operating temperature of wide bandgap semiconductor is higher than that of the first and second generation semiconductor materials. Breakdown field strength and saturation thermal conductivity are also much larger than Si and GaAs.
The third generation of wide band gap semiconductor applications
According to the development of the third generation of semiconductors, its main application for the semiconductor lighting, power electronic devices, lasers and detectors, as well as four other areas, each industry industry maturity is different. In the field of cutting-edge research, wide bandgap semiconductor is still in the laboratory development stage.

Semiconductor lighting
Blue LED in the use of substrate materials to divide the technical route. (Al2O3), SiC, Si, GaN and AlN. The latter two industries are fashionable, we discuss the next three. In general, three kinds of materials, such as sapphire (SiC), SiC, Si, The monolithic silicon substrate size is the largest, the lowest cost, but the inherent huge lattice mismatch and thermal mismatch; silicon carbide superior performance, low cost, low cost, low cost, But the preparation of the substrate itself pull the back leg.

LED three substrates
Global LED substrate market analysis: Plessy, Crystal Optoelectronics and Samsung mainly use silicon substrate, but the technology started late, the current industry is small, low market share; Cree company mainly uses silicon carbide substrate, but because of its Cost issues, coupled with patent monopoly, almost no other companies involved. Sangua, which is under the leadership of Nakamura, is predicting the use of gallium nitride (GaN) substrates, which are good LED substrate materials, but are more expensive than sapphires and are limited in size and can not be used in large quantities. Therefore, the sapphire substrate to the rapid development, occupy the mainstream market.
According to the IHS latest research shows that in 2015, 96.3% of global LED production are using sapphire substrate, is expected by 2020 the data will rise to 96.7%. 2015 mainly due to price decline, sapphire application market was able to boost. In particular, 4-inch wafers accounted for 55% of the market share in 2015, of which 9.9% was divided by Samsung, Seoul Semiconductor, Epistar and other large manufacturers; 6-inch wafer production capacity continued to grow, mainly in Osram, Lumileds , LG Chemical and Career and other manufacturers preferred.
Power devices

SiC and GaN commercial power devices development process
Many companies have begun to develop SiC MOSFETs, including Cree's Wolfspeed (acquired by Infineon), Roma, STMicroelectronics, Mitsubishi and General Electric. In contrast, fewer players enter the GaN market, starting late.

Development of SiC semiconductor materials and devices
In 2015, the size of the SiC power semiconductors (including diodes and transistors) is about $ 200 million, and by 2021 the market is expected to exceed $ 550 million, with a compound annual growth rate of 19%. There is no suspense, consuming a large number of diode power factor correction (PFC) power supply market, will continue to be the most important application of SiC power semiconductors.