Principle of the diode

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Principle of the diode

The crystal diode is a pn junction formed by a p-type semiconductor and an n-type semiconductor. A space charge layer is formed on both sides of the interface, and a self-built electric field is built. When there is no applied voltage, the carriers are both sides of the pn junction. The diffusion current caused by the difference in concentration is equal to the drift current caused by the self-built electric field and is in an electrical equilibrium state. When a forward voltage bias is generated, the mutual suppression of the external electric field and the self-built electric field causes the diffusion current of the carrier to increase to cause a forward current (that is, a cause of conduction). When a reverse voltage bias is generated, the external electric field and the self-built electric field are further enhanced to form a reverse saturation current I0 (which is the cause of non-conduction) that is independent of the reverse bias voltage value in a certain reverse voltage range.
When the applied reverse voltage is high to a certain extent, the electric field strength in the space charge layer of the pn junction reaches a critical value to generate a multiplication process of carriers, generating a large number of electron hole pairs, and generating a large reverse breakdown current. It is called the breakdown phenomenon of the diode.
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Principle of the diode