What are the characteristics of Schottky diodes?
Schottky diodes are named after their inventor, Dr. Schottky, short for Schottky Barrier Diode (abbreviated as SBD). The SBD is not fabricated by the principle of forming a PN junction by contacting a P-type semiconductor with an N-type semiconductor, but by a metal-semiconductor junction principle formed by metal-to-semiconductor contact. Therefore, SBD is also called a metal-semiconductor (contact) diode or a surface barrier diode, which is a hot carrier diode.
First, since SBD is a majority carrier conductive device, there is no minority carrier lifetime and reverse recovery problem. The reverse recovery time of the SBD is only the charge and discharge time of the Schottky barrier capacitor, which is completely different from the reverse recovery time of the PN junction diode. Since the reverse recovery charge of the SBD is very small, the switching speed is very fast and the switching loss is also very small, which is especially suitable for high frequency applications.
Second, because the Schottky barrier height is lower than the PN junction barrier height, its forward conduction threshold voltage and forward voltage drop are both lower than the PN junction diode (about 0.2V lower).
The above is Shenzhen Fuanchang Technology Co., Ltd., Qiangmao agent Xiaobian to give you the information.
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